Kinetic model for a step edge in epitaxial growth.

نویسندگان

  • R E Caflisch
  • W E
  • M F Gyure
  • B Merriman
  • C Ratsch
چکیده

A kinetic theory is formulated for the velocity of a step edge in epitaxial growth. The formulation involves kinetic, mean-field equations for the density of kinks and "edge adatoms" along the step edge. Equilibrium and kinetic steady states, corresponding to zero and nonzero deposition flux, respectively, are derived for a periodic sequence of step edges. The theoretical results are compared to results from kinetic Monte Carlo (KMC) simulations of a simple solid-on-solid model, and excellent agreement is obtained. This theory provides a starting point for modeling the growth of two-dimensional islands in molecular-beam epitaxy through motion of their boundaries, as an alternative to KMC simulations.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Anisotropic Step Stiffness from a Kinetic Model of Epitaxial Growth

Starting from a detailed model for the kinetics of a step edge or island boundary, we derive a Gibbs-Thomson type formula and the associated step stiffness as a function of the step edge orientation angle, θ. Basic ingredients of the model are: (i) the diffusion of point defects (“adatoms”) on terraces and along step edges; (ii) the convection of kinks along step edges; and (iii) constitutive l...

متن کامل

Analysis of Island Dynamics in Epitaxial Growth of Thin Films

This work is concerned with analysis and refinement for a class of island dynamics models for epitaxial growth of crystalline thin films. An island dynamics model consists of evolution equations for step edges (or island boundaries), coupled to a diffusion equation for the adatom density, on an epitaxial surface. The island dynamics model with irreversible aggregation is confirmed to be mathema...

متن کامل

Characterizing equilibrium in epitaxial growth

Using a kinetic model of epitaxial growth, we describe how geometry controls kinetic pathways through which external deposition influences the state of a vicinal surface. The state of the surface is determined by three key, adjustable parameters: the local step angle θ, the Péclet number P , and the single-bond detachment rate b̆. By scaling arguments in P , we find three steady-state regimes. I...

متن کامل

Coupling kinetic Monte-Carlo and continuum models with application to epitaxial growth

We present a hybrid method for simulating epitaxial growth that combines kinetic Monte-Carlo (KMC) simulations with the Burton–Cabrera–Frank model for crystal growth. This involves partitioning the computational domain into KMC regions and regions where we time-step a discretized diffusion equation. Computational speed and accuracy are discussed. We find that the method is significantly faster ...

متن کامل

From Initial to Late Stages of Epitaxial Thin Film Growth: STM Analysis and Atomistic or CoarseGrained Modeling

Epitaxial thin film growth by vapor deposition or molecular beam epitaxy under ultra‐high vacuum conditions generally occurs in two stages: (i) nucleation and growth of well‐separated islands on the substrate; (ii) subsequent formation of a thicker continuous film with possible kinetic roughening. For homoepitaxial growth, two‐dimensional (2D) monolayer islands are formed during submonolayer de...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics

دوره 59 6  شماره 

صفحات  -

تاریخ انتشار 1999